Abstract
High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 109 cm−2) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
Highlights
High density GaN/AlN quantum dots for deep UV light-emitting diodes (LEDs) with high quantum efficiency and temperature stability
AlGaN MQWs have been grown on the bulk AlN, the nano-patterned sapphire substrate, or thick AlN layer epitaxied by high temperature metal-organic vapor phase epitaxy (MOVPE), in which the maximum external quantum efficiencies (EQE) of 10.4% is obtained[11,12,13]
We report the UV LED with room temperature (RT) emission near 300 nm, based on GaN/AlN quantum dots (QDs) grown by MOVPE, with an estimated internal quantum efficiencies (IQE) as high as 62%
Summary
High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability. High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 3 109 cm22) GaN/AlN quantum dots (QDs) grown by MOVPE. The internal quantum efficiencies (IQE) of the AlGaN MQW LED is much lower than that of the InGaN blue LED, because of the high density typically found in the AlGaN MQW7–10 To reduce this problem, AlGaN MQWs have been grown on the bulk AlN, the nano-patterned sapphire substrate, or thick AlN layer epitaxied by high temperature metal-organic vapor phase epitaxy (MOVPE), in which the maximum external quantum efficiencies (EQE) of 10.4% is obtained[11,12,13]. The IQE and recombination dynamics were analyzed by temperature-dependent PL and time-resolved photoluminescence (TRPL) between 15 K and 300 K
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