Abstract
Phototransistors with amorphous oxide semiconductors (AOSs) have attracted considerable attention owing to their low leakage current density and process compatibility with the active array. In this study, we introduce hydrogen (H) from the source/drain electrodes to the active layer using a Ti-based alloy, specifically MoTi. The device with MoTi electrodes exhibits a more negatively shifted Von value of −3.34 V compared to the device with MoAl electrodes. The H in the oxide semiconductor passivates the oxygen vacancy states and generates additional deep states above the oxygen vacancy states. Consequently, phototransistors with MoTi electrodes demonstrate a higher photoresponse under green and blue light.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
