Modified small‐signal behavioral model for GaN HEMTs based on support vector regression

Abstract

A novel, modified small signal behavioral modeling methodology for gallium nitride (GaN) high electron-mobility transistors (HEMTs), based on the support vector regression (SVR) technique, is presented in this paper. Compared with the classic equivalent small-signal circuit model, the proposed model adds an error correction technique, which is developed using SVR techniques. The proposed model maintains accuracy across a broad frequency range, from 1 GHz to 10 GHz. The verification is performed through comparisons with measured multibias S-parameter data performed on an 8 × 125 μm GaN HEMT device with a 0.25 μm gate feature size. The modified model shows a significant improvement in S-parameter prediction accuracy when compared with the classic equivalent circuit modeling approach.