Abstract
This paper introduces threshold voltage modelling of new doping profile for devices to be used in subthreshold circuit applications. The proposed scheme addresses doping variations along all dimensions of device. This new doping scheme proposes to employ Gaussian distribution of doping concentration along length of the channel with highest concentration at middle of channel.
Highlights
Proper ion implantation or Doping is one of the most critical design decisions for deeply scaled CMOS devices
It is observed that with lateral asymmetric channel (LAC) doping the total gate capacitance of a transistor is reduced by almost 10% in the saturation region at 100 nm technology node compared to the conventional MOSFETS [1,2]
This paper presents a study of the doping profile optimization in the channel for subthreshold operation
Summary
Proper ion implantation or Doping is one of the most critical design decisions for deeply scaled CMOS devices. Short-channel devices are usually optimized for operation in super-threshold region to ensure higher mobility, lower drain-induced barrier lowering (DIBL), reduced leakage, and minimal threshold voltage roll-off. A transistor optimized for super-threshold circuit may not be optimal for the subthreshold region where effects like DIBL, threshold voltage roll-off and electron/hole tunneling are much less significant [4]. High doping traditionally used in super-threshold device to overcome the short-channel effect (SCE) will not be critical for subthreshold operation [5]. An attempt has been made to explore a set of new doping profiles for devices to be used in subthreshold circuit.
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