Abstract
A current-in-plane tunneling measurement is a superb solution for evaluating a magnetic tunnel junction's properties because it does not require the series of patterning processes in a clean room that have frustrated many researchers because of the damage and side effects frequently induced by these processes. We found that previously proposed current-in-plane tunneling analysis for double-barrier magnetic tunnel junctions (DMTJs) accurately predicts their electrical properties but often fails to provide other detailed properties of DMTJs. Here, we propose and demonstrate a modified analytic method that can provide an excellent estimate of the electrical and magnetic properties of DMTJs by considering the intermediate magnetization state between parallel and antiparallel states, which has previously been ignored. We found that considering this intermediate state is necessary and sufficient for evaluating the tunneling properties. We also prove that our method is valid even for DMTJs with two identical barriers and even without knowledge of any of the initial properties of their layers, a challenging task for previous methods. We believe that our analytic method yields the correct results when evaluating the properties of DMTJs and will be particularly useful for those who cannot access the well-maintained clean-room facilities needed to make tunnel patterns.
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