Abstract
Thin films of amorphous silicon prepared by a number of methods including rf diode sputtering, ion-beam sputtering, and CVD have been studied by Raman scattering and optical absorption measurements. Modifications of the structural order have been examined as a function of the deposition method as well as variations in the substrate temperature and bombardment conditions. The results indicate substantial changes in the Raman spectra that arise from changes in the phonon density of states with disorder in the amorphous network. Modification of the network disorder is attributed to changes in the width of the tetrahedral bond angle distribution which can be estimated from the width of the high frequency peak in the depolarized Raman spectra. While variations in the width of the bond angle distribution are small, they result in significant changes in the phonon density of states. The observation of a direct correspondence between the width of the high frequency peak in the Raman spectra and the optical band gap further indicates that near gap electronic states are also highly sensitive to variations in the structural order.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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