Abstract
We report the effect of high energy light ion irradiation on the defect energy levels related to the stable and metastable states of EL2 in undoped semi-insulating GaAs. GaAs samples have been irradiated at different fluences with 50 MeV Li ions. The energy of the irradiated ions is chosen in such a way that the range of the ions is more than the sample thickness. So the implantation of the irradiated ions and the formation of the extended defects at the end of the range could be avoided. The modification of the existing native point defects and the formation of new point defects under irradiation have been studied by photocurrent and thermally stimulated current spectroscopic measurements under the photoexcitation of both sub-band gap and above band gap lights.
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