Abstract
A wide variety of post deposition thermal treatments was carried out on Ru and RuO 2 films prepared by chemical vapor deposition on a 50 Å thick sputter deposited Ru seed. These treatments lead to identify three different routes with respect to modifications in the film microstructure: (1) nitrogen and forming gas annealing and Rapid Thermal annealing in Nitrogen ambient (RTN) on Ru films as well as nitrogen gas annealing, RTN treatment at 600 °C, and Rapid Thermal annealing in Oxygen ambient (RTO) on RuO 2 films, do not change the film phase, but lead to grain growth and reduction in the electrical resistivity of the film. (2) Forming gas annealing and RTN treatment at 750 °C for 60 s result in reduction of RuO 2 to Ru, leading to formation of cracks and increase of surface roughness in the film, respectively. (3) An RTO treatment oxidizes Ru films with some protrusion formation in the resultant oxide.
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