Abstract
It is shown that the Van der Pau method can be used under illumination of the sample near-contact region with monochromatic radiation of variable intensity with a quantum energy that exceeds the investigated-material band gap. A modified Van der Pau technique for measuring such high-resistance semiconductor parameters as the electrical resistivity and the free-carrier concentration and mobility is proposed. This technique was tested on a semi-insulating n-type gallium arsenide sample with a free-electron concentration at room temperature of ∼107 cm−3.
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