Abstract
Using the methods of Auger electron spectroscopy, electron energy loss spectroscopy, and UV photoelectron spectroscopy, the influence of Ba+ ion implantation on the composition, crystal structure, and electron configuration of the surface of Si–Cu(100) free films have been investigated. Specifically, it has been shown that Ba ion implantation and subsequent annealing make it possible to obtain BaSi nanofilms with some excess (to 10 at %) of unbounded silicon atoms.
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