Abstract
AbstractIn present work, the influence of single monolayer CdTe film insertion on the luminescence and structural characteristics of CdZnTe/ZnTe quantum well (QW) was investigated by the photoluminescence (PL) and the high resolution X‐ray diffraction (HRXRD) methods. The structures were grown by MBE on GaAs substrate and contained Cd0.4Zn0.6Te QW of 8 nm thickness with or without 1 monolayer CdTe film embedded in the middle of QW. The low temperature PL investigations showed that insertion of CdTe layer resulted in a “blue” shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. Temperature dependencies of the QW PL spectra as well as time‐resolved PL investigations indicated that these changes are caused by the increase of shallow localized state density and the decrease of deep one. The degradation of interface quality as well as the change of the QW composition were found by the HRXRD profiles. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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