Abstract
Eleven periods of GaAsBi/GaAs multiple quantum wells (MQWs) grown on (411)A and (411)B GaAs substrates at TGaAsBi= 350 °C and TGaAs= 550 °C by molecular beam epitaxy (MBE) and their structural and optical properties were investigated. The high resolution X-ray diffraction (HRXRD) analysis shows increment in Bi composition with the increasing As4 beam equivalent pressure (BEP). The reciprocal space mapping (RSM) reveals highly strained GaAsBi/GaAs MQWs layers can be grown without relaxation with respect to the (411) GaAs substrate on both A and B sides at an optimized growth condition of Bi and As4 BEP; while (411)A sample with higher bismuth content (5.5 %) shows lattice dislocation of MQWs due to lateral strain. The temperature-dependent photoluminescence (PL) shows 1.26 μm emission at room temperature from both the (411)A and (411)B samples for GaAs0.97Bi0.03/GaAs MQWs. It is perceived that GaAsBi/GaAs MQWS can be successfully grown on both sides of (411) GaAs substrate.
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