Abstract
TGS crystals grown under two different dc electric field strengths exhibit modified ferroelectric properties. The modifications show a dependence on the field strength applied during crystal growth. Prominent modifications were observed on crystals grown at high fields (80 kV/cm) than in crystals grown under lower dc electric fields (10 kV/cm). The modified ferroelectric properties stem from the domain structures influenced by the applied field. The domains on the low field grown crystals are more elongated and appear as thin strips. In the case of high dc field grown crystals, some of the domains are tilted under the influence of the field, resulting in the misalignment of the major axis of the domains with respect to the c-axis. The domain structure modifications under the influence of fields lead to an increase in the relaxation times. Reduced dielectric permittivity and spontaneous polarization also illustrate the effect created by the field.
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