Modification of interfacial carrier depletion in GaAs grown by molecular beam epitaxy

Abstract

The magnitude of carrier depletion at the interface between molecular beam epitaxial GaAs and a GaAs substrate is shown to depend upon the length of exposure to ultraviolet ozone radiation. In particular, as the ozone exposure time increases, the interfacial carbon concentration and loss of carriers at the interface decrease. The data suggest a relationship between electrically measured carrier depletion and the impurity species, carbon and silicon, at the interface.