Modification of desorption phenomenon of Sb on Si surfaces by atomic hydrogen termination

Abstract

Sb sticking and desorption on hydrogen terminated and clean Si surfaces are studied using molecular beam epitaxy. When Sb atoms impinge on Si surfaces, Sb atoms accumulate on a clean Si surface in proportion to Sb deposition time, independently of substrate temperature. For a hydrogen terminated surface, accumulation of Sb atoms is reduced by hydrogen treatment due to desorption with an energy of 0.14 eV, which correspond to the van der Waals bond energy, and the accumulated Sb atoms are thought to make clusters and the thermal activation energy of desorption changes from 0.14 to 1.35 eV of the Sb–Sb bond.