Abstract
The effect of nitrogen on the band offset of sputtering-derived InZnGaO4 (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d5/2, In 3d3/2 and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (ΔEv) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (ΔEc) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and ΔEv and the slight effect on the ΔEc has also been detected.
Published Version
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