Abstract
Recently we presented a new expression to model mobility in a-Si:H TFTs model parameters in the subthreshold region and the procedure for the extraction of basic model parameters in this region. The main characteristics of extraction procedure is the use of the Integral Function Method (IFM), that permits to extract in a simple and direct way basic model parameters from experimental transfer and output characteristics. In this work we report results of comparing simulated in AIMSpice a-Si:H TFTs after including the new subthreshold model, with experimental curves. The model and extraction procedure has been tested for a-Si:H TFTs with channel length down to 4 /spl mu/m, observing good coincidence between simulated, using parameter values obtained with our new extraction procedure and experimental curves, in all working regions of the devices.
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