Abstract
In the previous chapter we had discussed the experimental setup needed for acquiring the different types of data required for MOSFET model parameter measurements and/or extraction. We had also discussed linear regression methods to determine basic MOSFET parameters. In this chapter we will be concerned with the nonlinear optimization techniques for extracting the device model parameters for various DC and AC models. These techniques are general purpose model parameter extraction methods that can be used for any nonlinear physical model. There are many books devoted to the area of optimization. Our intent here is only to provide an introduction to the optimization technique as applied to the device model parameter extraction. Various optimization programs (also called optimizers), which have been reported in the literature for device model parameter extraction, differ mainly in the optimization algorithms used.KeywordsFeasible RegionConfidence RegionLinear Regression MethodParameter ExtractionSubthreshold RegionThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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