Abstract
Inverted perovskite solar cells (IPSCs) utilizing nickel oxide (NiOx) as hole transport material have made great progress, driven by improvements in materials and interface engineering. However, challenges remain due to the low intrinsic conductivity of NiOx and inefficient hole transport. In this study, we introduced MoS2 nanoparticles at the indium tin oxide (ITO) /NiOx interface to enhance the ITO surface and optimize the deposition of NiOx, resulting in increased conductivity linked to a ratio of Ni3+:Ni2+. This interface modification not only optimized energy level but also promoted hole transport and reduced defects. Consequently, IPSCs with MoS2 modified at ITO/NiOx interface achieved a champion power conversion efficiency (PCE) of 21.42 %, compared to 20.25 % without modification. Additionally, unencapsulated IPSCs with this interface modification displayed improved stability under thermal, light, humidity and ambient conditions. This innovative strategy for ITO/NiOx interface modification efficiently promotes hole transportation and can be integrated with other interface engineering approaches, offering valuable insights for the development of highly efficient and stable IPSCs.
Published Version
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