Models for electron mobility and temperature of two-dimensional electron gas at low and moderate fields

Abstract

A theoretical model of electron temperature and electron mobility as a function of electric field has been formulated for GaAs/AlxGa1−xAs heterostructures. The predicted results from this model agree well with available measurements at low and moderate fields (E>200 V/cm). Furthermore, this model enables us to predict the electron temperature and mobility at high fields which are crucial to the understanding of the potential performance of GaAs/AlxGa1−xAs modulation-doped field effect transistor and other novel heterostructures.