Abstract
Operation of multiple-quantum-well (MQW) light emitting diode (LED) heterostructures with selective barrier doping is studied by modelling. The carrier confinement in the MQW LEDs and the effects of barrier doping on the emission efficiency and wavelength stability is examined in detail. The simulations predict improvement of the LED performance by heavy n-doping of the MWQ barriers. The theoretical predictions are compared with available experimental data. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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