Abstract
The In0.05Ga0.95N/GaN, In0.05Ga0.95N/Al0.1Ga0.9N, and In0.05Ga0.95N/Al0.18Ga0.82N multiple-quantum well (MQW) light-emitting diodes (LEDs) were prepared by metal-organic chemical-vapor deposition. (MOCVD). It was found that the 20-mA electroluminescence (EL) intensity of the InGaN/Al0.1Ga0.9N MQW LED was two times larger than that of the InGaN/GaN MQW LED. The larger maximum-output intensity and the fact that maximum-output intensity occurred at a larger injection current suggest that Al0.1Ga0.9N-barrier layers can provide a better carrier confinement and effectively reduce leakage current. In contrast, the EL intensity of the InGaN/Al0.18Ga0.82N MQW LED was smaller because of the relaxation that occurred in the MQW active region of the sample.
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