Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (⩽ 1015 1 MeV neq/cm2).

Highlights

  • Publisher Rights Statement: Checked for eligibility: 19/06/2019 Modelling radiation damage to pixel sensors in the ATLAS detector M

  • The goal of this paper is to present a model for radiation damage to silicon sensors that is fast enough to be incorporated directly into the digitization step of the ATLAS Monte Carlo (MC) simulation, i.e. the conversion from energy depositions from charged particles to digital signals sent from module front ends to the detector read-out system

  • TCAD simulations with effective traps in the silicon bulk are used to model distortions in the electric field caused by exposure to radiation

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Summary

The ATLAS pixel detector and radiation damage effects

The ATLAS pixel detector [3,4,5] consists of four barrel layers and a total of six disc layers, three at each end of the barrel region. The effective doping concentration decreases with increasing fluence until the sensor bulk undergoes space-charge sign inversion (often called type inversion) from ntype to p-type. The goal of this paper is to present a model for radiation damage to silicon sensors that is fast enough to be incorporated directly into the digitization step of the ATLAS Monte Carlo (MC) simulation, i.e. the conversion from energy depositions from charged particles to digital signals sent from module front ends to the detector read-out system.

20 ATLAS Simulation
Luminosity to fluence
Conclusions from predicting IBL leakage currents
ATLAS Internal
Annealing and depletion voltage
Overview
Electric field
Simulation details
Electric field profiles
Electric field profile uncertainties
Effective modelling of annealing effects in TCAD simulations
Electrons Holes
Lorentz angle
Charge trapping
Ramo potential and induced charge
Data and simulation
Charge collection efficiency
Findings
Conclusions and future outlook
Full Text
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