Abstract
The influence of the density (N dis) and of the recombination activity (S d) of dislocations on the effective electron diffusion length (L eff) in silicon are computed by means of the Green function method. S d is the surface recombination velocity at the edge of the cylindrical space charge region surrounding the dislocation core. The computed results indicate that the values of L eff are dependent on both N dis and S d, especially when N dis and S d are greater than 10 3 cm −2 and 10 4 cm s −1 respectively. The computed variations also depend on the value of the diffusion length in the undislocated region of the material. A reasonable agreement is found between computed and experimental values, and the passivation by hydrogen could be understood by the decrease of S d below 10 3 cm s −1.
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