Abstract
A model for the ohmic operation of a MOS transistor at very low temperature (4–40 K) is presented. The model is based on a quantum treatment of the inversion layer and on a specific low temperature mobility law. It enables a good description of the MOSFET transfer characteristics (field effect mobility, drain current) as a function of gate voltage and predicts the temperature dependence of the maximum field effect mobility and of the threshold voltage.
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