Single‐layer thin‐film transistor analysis and design

Abstract

AbstractA set of direct current (DC) analytical equations is formulated for the analysis and design of a single‐layer thin‐film transistor (TFT). For a specified TFT structure, drain current is calculated as a function of drain and gate voltage (taking the source as ground) according to the Enz, Krummenacher, Vittoz (EKV) compact model. One model parameter function is required to implement this EKV‐based equation, that is, drift mobility as a function of gate voltage. Drift mobility is evaluated as a consequence of accumulation layer electrostatics assessment of the TFT structure specified. In order to implement the model, three semiconductor properties (low‐frequency (static) relative dielectric constant, free electron concentration, and maximum (no trapping) mobility), two structure properties (insulator capacitance density and TFT width‐to‐length ratio), and one physical operating parameter (temperature) must be specified. Optimal TFT mobility performance is achieved when the thickness of the semiconductor channel layer is constrained to be less than 2.22 times the channel layer Debye length such that “short‐base” TFT operation obtains. Additionally, higher mobility TFT performance is obtained by selecting a channel layer with a small electron effective mass, reducing channel layer trap density, reducing channel layer thickness, reducing the free electron concentration, and/or increasing gate capacitance density.