Modelling of inverters using MoS2 based transistors

Abstract

MoS2 FETs are innovative devices for non-CMOS microelectronics owing to their extremely good band gap, carrier properties and ability for large-scale processing and manufacturing. In this paper we discuss the modelling of MoS2 transistor and circuit simulation of MoS2 FET and design inverter using MoS2 transistor circuits. The model supports various design of transistor parameters like the channel length, width, oxide separation, MoS2 material as channel. The drain current for single layer MoS2 FET is presented. First, a direct description of the drain current Id has been obtained with respect to the drift-diffusion process for carrier mobility along the single layer MoS2 FET. The designed transistor model has been simulated. Based entirely on the current model, the MoS2 transistor inverter circuits for low-power applications are addressed. In order to explore the design space of MOS2 based transistors we have conducted SPICE simulations on digital logic circuits such as inverters. We show that MoS2 outperforms Si-based CMOS.