(Invited) Fundamentals in MoS2 Transistors: Dielectric, Scaling and Metal Contacts

Abstract

The rise of two-dimensional (2D) crystals has given new challenges and opportunities to the device research. The semiconducting MoS2 has been considered as a promising ultrathin body channel for future microelectronic and optoelectronic devices. In this paper, we focus on the fundamental device properties in MoS2 transistors. In the first part we introduce the dielectric integration on MoS2 and other 2D crystals by atomic layer deposition, revealing the similarities and differences of dielectric integration on bulk and 2D crystals. Then we discuss scaling of channel length and width of MoS2 transistors. We also present the different metal contacts on MoS2, showing Fermi level pinning at metal/2D interfaces. Finally we demonstrate a statistical study on CVD based single layer MoS2 transistors, therefore to show potentials and limitations on these 2D crystals in device applications.