Abstract
An insulated gate bipolar transistor (IGBT) model based on gate drive voltage is proposed in this paper. The parameters of the model can be easily extracted referring to the dynamic characteristics in each period of transient process. The IGBT transient was analyzed with gate drive voltage in detail. The IGBT model was implemented in PSIM and the nonlinear parameters were described by constants and switches in terms of the analyses. The model parameters were provided for a typical high voltage IGBT (FZ600R65KF1). The test experiment was done and the accuracy of the model was verified. The IGBT model was applied to simulate the transient process with gate active clamp circuit. Experimental and simulated waveforms were compared.
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