Abstract
A new analytical insulated gate bipolar transistor (IGBT) model for improved on-state characteristics prediction is proposed. Two-dimensional (2-D) effects in the forward conduction of an IGBT are studied analytically. These effects significantly in8uence the on-state characteristics of the device and must be accounted for when IGBT modeling. Dynamic characteristics and temperature effects are included in the model. Both three-dimensional (3-D) numerical simulation and experimental results support the theoretical analysis.
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