Abstract
Reducing the concentration of the metallic impurities present insilicon-based electronic components plays a vital role in manufactures.Gettering by induced mechanical damage is one of the methods used inneutralizing these impurities. To simulate this type of gettering, weexplicitly include the role of the traps due to mechanical damage,based on the mechanism of kick-out. In our model, we choose theessential parameters including concentration of impurities, thickness,temperature, time, etc. The diffusion coefficient and equilibriumconcentration of the silicon interstitials estimated from the literaturehave been adjusted to be in good agreement with the experimental data.
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