Abstract
Abstract A systematic theoretical model of threshold voltage (VT) for AlGaN/GaN fin shaped nano channel HEMT (FinHEMT) structure has been proposed. This device can achieve enhancement mode operation with decreased fin width (Wfin). This proposed model captures the decreased two dimensional electron gas (2DEG) density due to combined effect of built-in partial strain relaxation and partial side wall depletion (Wdepl) of nano channel due to surface potential of sidewalls. This leads to positive VT which varies inversely with Wfin. This influence indicates that narrower fin width below 60 nm contributes to a stable positive threshold voltage.
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