Abstract
A new approach is proposed for the accurate modelling of dynamic (e.g., pulsed) drain characteristics in GaAs FETs. It can be easily implemented in the framework of Harmonic-Balance tools for nonlinear circuit analysis and design. The model takes simultaneously into account low-frequency dispersive phenomena due to surface state densities, deep level traps and thermal effects. It is based on mild assumptions confirmed both by theoretical considerations and preliminary experimental results for GaAs MESFETs.
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