Abstract
A new temperature dependent apparent bandgap narrowing model, appropriate for low temperature device simulations is proposed. The model is based on the decomposition of apparent bandgap narrowing in equilibrium into different contributions at 300K and on the theoretical temperature dependence of each phenomenon. Specific heavy doping effects that can be important at low temperatures are discussed. Temperature dependence of apparent bandgap narrowing in equilibrium is more significant at high concentration of ionized impurities, where apparent bandgap narrowing decreases with decreasing temperature, as a consequence of temperature dependent degeneracy
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