Abstract
DNA based microelectronics technology have been developed in the last couple of years, but researchers found that its stability can be volatile to the change in its environment. In this research, electron transport in DNA poly(dA)-(dT) have been analysed by observing its density of states (DOS) and localization length. Retarded green function is used to calculate DOS, whereas transfer-matrix method is employed in calculating localization length in order to determine the electronic structure of the DNA. Along the z-axis of DNA electric field is applied, it will alter hopping constant between sites in DNA. Tight binding model is incorporated with Miller-Abraham expression to yield electric field and also temperature influence in DOS. Effect of medium is considered within the calculation. The results tell us that as the electric field increases, the value of DOS decreases, so that the localization length. The increment of temperature also shows similar trend.
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