Abstract
The method of synchronization of nucleation (SN) by means of periodically altering the substrate temperature has been studied theoretically by using a simple Monte Carlo simulation model and by applying a realistic temperature function. SN has also been studied experimentally using reflection high energy electron diffraction (RHEED) intensity oscillations. Results for SN applied to growth of Si and Si1-x Gex on Si(111) are presented. Our growth simulations of Si on Si(111) support the experimental results that an improved layer-by-layer growth below the step flow regime can be obtained using SN.
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