Modelinig of Dopant Diffusion and Associated Effects in Silicon

Abstract

ABSTRACTResearch in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together we can infer the relative importance of vacancies versus Si selfinterstitials in the diffusion of each dopant species.