Abstract
We show that the photon energy dependence of the photo-induced inverse spin-Hall effect (ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly accounts for the electron spin diffusion length Ls in the semiconductor. In particular, we consider the Pt/GaAs, Pt/Ge, and Pt/Si systems: although optical spin injection and transport of spin-polarized electrons in the conduction band of these semiconductors are ruled by different mechanisms, a simple one dimensional analytical diffusion model, where Ls is the free parameter, can reproduce the ISHE data in all cases. This highlights the potentialities of the photo-induced ISHE spectra as a tool to directly address fundamental spin transport properties in semiconductors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
