Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect

C H Chen,D Chen,J B Kuo,C S Yeh

doi:10.1109/icsict.2010.5667810

Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect

C H Chen, D Chen + Show 2 more

https://doi.org/10.1109/icsict.2010.5667810

Copy DOI

Publication Date: Nov 1, 2010

Affiliation: National Taiwan University, United Microelectronics (Taiwan)

#Parasitic Bipolar Device #Floating Body Effect + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

This paper reports modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect. Using a unique extraction method, the function of the parasitic bipolar device during transient operations could be modeled. During the turn-on transient by imposing a step voltage from 0V to 2V at the gate, the case with a slower rise time shows a faster turn-on in the drain current due to a stronger function of the parasitic bipolar device from smaller displacement currents through the gate oxide, as reflected in the current gain, as verified by the experimentally measured results.

Full Text