Abstract
Analytical models for the on-state characteristics of the Emitter Switched Thyristor have been developed, which allow calculation of the on-state voltage drop, latching current, holding current, and parasitic thyristor latching current as a function of the device's physical and material parameters. The model is based on the equivalent circuit representation of the EST using a thyristor in series with a lateral MOSFET. The behavior of the forward conduction characteristic as a function of various device geometrical parameters is discussed and included in the model. The analytical model is compared with the experimental data obtained from 600 V forward blocking unit cell devices fabricated using an IGBT process sequence.
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