Abstract
This paper presents an approach to model the effect of magnetic field on the electrical behavior of MOS transistor. It is shown that an out-of-plane magnetic field ${B}$ induces a reduction of the channel conductivity, and that this reduction is proportional to the square of ${B}$ and the square of the carrier mobility. Providing an accurate model of the mobility versus the gate to source and drain to source voltages in all working conditions of the transistor, the effect of ${B}$ on the MOS transistor can be accurately modeled. Experimental data in strong inversion and linear regime are in very good agreement with the proposed model.
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