Modeling the Centroid and the Inversion Charge in Cylindrical Surrounding Gate MOSFETs, Including Quantum Effects

Abstract

A semiempirical model was developed for calculating the inversion charge of cylindrical surrounding gate transistors (SGTs), including quantum effects. To achieve this goal, we used a simulator that self-consistently solves the 2-D Poisson and Schrodinger equations in a cross section of the SGT. By means of the proposed models, we correctly reproduced the simulation data for a wide range of the device radius and gate voltage values. Both the inversion charge and the centroid models consist of simple mathematical equations within an explicit calculation scheme suitable for use in circuit simulators.