Abstract

The generalized plane deformation (GPD) mode is a simplified model that effectively reflects the information of whole chip and local regions. In this paper, we propose a modified-GPD model for thermal-stress analysis of through silicon via (TSV) interposer application. Highly doped poly silicon is used to fill TSV in our modeling. The boundary conditions are optimized. The accuracy is largely improved and the computation time is reduced compared with conventional GPD model.

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