Abstract
A model for quantum dot (QD) superluminescent light emitting diode (SLED) is presented to study an optical power output and linewidth over a wide range of injection currents. The analysis is based on the photon and carrier rate equations including the effects of homogeneous and inhomogeneous broadening, carrier escape process, and high-current heating. The model is validated using experimental data available from the literature. The results show non-monotonic variations of the output optical power and linewidth of the SLED with the injection current density. It is seen that there exists an optimum injection current density for which the power–linewidth product becomes maximum for a given device length of the QD SLED.
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