Abstract
The authors report the creation of low reflectivity angled facets by focused-ion-beam postfabrication etching. A method to directly measure the effective facet reflectivity of such facets, utilizing gain saturation effects in the quantum dots is described. The reflectivities of the angled facets are shown to decrease by increasing the facet angle from 0° to 15°. With a reflectivity of <1×10−6 obtained for a facet with a 15° angle, allowing quantum dot superluminescent light-emitting diodes to be fabricated. The use of different angled facets to control the emission wavelength of both quantum dot lasers and superluminescent light-emitting diodes is outlined.
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