Abstract
In article the nonlinear electromagnetic processes in electronic material, formed by the ordered structure of discrete electronic devices of a gigabyte and terahertz ranges are considered. Based on structural and technological design of real microwave integrated circuit fragment, the analytical exp
Highlights
It is known that microwave high-power integrated circuits with negatrons - avalanche transit time diodes and resonant tunneling diode can be considered as a material medium that transforms the electromagnetic field energy
Of nonlinear elements; γ jβ – propagation factor of electromagnetic field perturbation in the zero-loss uniform transmission line ( – phase coefficient); Y0=1/Z0, l – its characteristic admittance and geometrical length; Gн1=Y0, Gн2, Ge2(U2) - frequency-independent conductivity of a source and a "useful" load simulated by negatron and resistor
The boundary conditions in the beginning and in the end of the studied one-dimensional electronic circuit, microwave electric field extremum position relative to electronic device depend on primary source intensity and interference effect in artificial material
Summary
It is known that microwave high-power integrated circuits with negatrons - avalanche transit time diodes and resonant tunneling diode can be considered as a material medium that transforms the electromagnetic field energy. As related unknown parameters of integrated circuit model, the constant and alternating voltage and current of the resistive-negatron nonlinear elements that simulate correlatively working avalanche transit time and resonant tunneling diodes are used.
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