Abstract
A new model for the mechanism of photoconductivity in annealed polycrystalline PbSe fllm is presented. The combined mechanism with respect to double heterojunction due to oxidation layer, dopant segregation and carrier trapping at grain-boundary is proposed. This letter focuses on characterizing the potential proflle, which is extremely important from the viewpoint of carrier transport phenomena. A potential proflle adjacent to the boundaries was calculated, and the efiect of biased voltage was in detail discussed, which shows that the mech- anism of photoconductivity of annealed polycrystalline PbSe fllm depends on properties of the grain boundaries.
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