Modeling of the Growth Rate during Top Seeded Solution Growth of SiC Using Pure Silicon as a Solvent

Abstract

To assist the development of high quality single crystalline SiC ingot using the top seeded solution growth process, we have implemented a numerical model with the aim of giving quantitative outcomes in addition to qualitative information. The major role of the convection patterns on the carbon flux is demonstrated. We also evidence that the carbon solubility in liquid silicon is the actual limiting parameter of the SiC solution growth process. A good agreement between computed and experimental growth rates is obtained as a function of temperature, making simulation an adapted predictive tool for the further development of the process.