Abstract
A global numerical simulation was performed for the induction heating Top-Seeded Solution Growth (TSSG) process of SiC. Analysis included the furnace and growth melt. The effects of interfacial force due to free surface tension gradient, the RF coil-induced electromagnetic body force, buoyancy, melt free surface deformation, and seed rotation were examined. The simulation results showed that the contributions of free surface tension gradient and the electromagnetic body force to the melt flow are significant. Marangoni convection affects the growth process adversely by making the melt flow downward in the region under the seed crystal. This downward flow reduces carbon flux into the seed and consequently lowers growth rate. The effects of free surface deformation and seed rotation, although positive, are not so significant compared with those of free surface tension gradient and the electromagnetic body force. Due to the small size of the melt the contribution of buoyancy is also small.
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