Modeling of the Growth Mechanisms of GaAsBi and GaAs Nanowires

Abstract

In this paper, we theoretically study the controlled growth mechanisms of planar GaAsBi and GaAs nanowires (NWs) on vicinal substrates. The method used in the present modeling investigation is based on kinetic Monte Carlo simulations. Along with this numeral approach, several experimental research works report that GaAsBi and GaAs NWs can be elaborated by molecular beam epitaxy. Our simulation results showed that the GaAsBi and GaAs NWs are formed at the step-edge of a vicinal surface. The modeling of the growth parameters such as the growth temperature and the deposition flux can provide important insights into the quality of the formed NWs. Particularly, high-quality NWs can be obtained via low deposition rate $$F = 1.66 \times 10^{ - 4} \;{\text{ML/s}}$$ and growth temperature ~ 550 K. The maximum filling ratio of NWs can be reached for a coverage rate θ > 0.25 ML and a deposition flux in the range of $$[10^{ - 5} - 10^{ - 3} ]\;{\text{ML/s}}$$ .